- 您现在的位置：买卖IC网 > Sheet目录406 > DMN3112SSS-13 (Diodes Inc)MOSFET N-CH 30V 6A 8SOP
DMN3112SSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
30V
R DS(ON) max
57m ? @ V GS = 10V
112m ? @ V GS = 4.5V
I D max
T A = +25°C
6.0A
3.8A
?
?
?
?
?
?
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
?
?
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This MOSFET has been designed to minimize the on-state
resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
? Backlighting
? Power Management Functions
? DC-DC Converters
?
?
?
?
?
?
Case: SOP-8L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
Weight: 0.074g (approximate)
SOP-8L
S
S
D
D
D
TOP VIEW
Ordering Information
(Note 4)
Part Number
DMN3112SSS-13
S
G
Top View
Internal Schematic
Case
SOP-8L
D
D
G
S
Equivalent circuit
Packaging
2500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
= Manufacturer’s Marking
N3112SS = Product Type Marking Code
YYWW = Date Code Marking
N3112SS
YY WW
N3112SS
YY WW
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1
4
1
4
Chengdu A/T Site
Shanghai A/T Site
DMN3112SSS
Document number: DS31582 Rev. 2 - 2
1 of 5
www.diodes.com
October 2013
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
DMN3115UDM-7
MOSFET N-CH 30V 3.2A SOT-26
DMN3135LVT-7
MOSFET N CH 30V 4.1A TSOT26
DMN3150L-7
MOSFET N-CH 28V 3.2A SOT23-3
DMN3150LW-7
MOSFET N-CH 28V 1.6A SC70-3
DMN3200U-7
MOSFET N-CH 30V 2.2A SOT23-3
DMN32D2LDF-7
MOSFET 2N-CH 30V 400MA SOT353
DMN32D2LFB4-7
MOSFET N-CH 30V 300MA 3-DFN
DMN32D2LV-7
MOSFET N-CH DUAL 30V SOT-563
相关代理商/技术参数
DMN3115UDM
制造商:Diodes Incorporated 功能描述:MOSFET N CH W ESD 30V 3.2A SOT26 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, W ESD, 30V, 3.2A, SOT26
DMN3115UDM-7
功能描述:MOSFET 900mW 30Vdss RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3135LVT-7
功能描述:MOSFET MOSFET BVDSS: 31V-40 1V-40V TSOT23 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3150L
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3150L-7
功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3150LW
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3150LW-7
功能描述:MOSFET 0.35W 28V 1.6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3200U
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR